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| Preliminary Data SIPMOS Small-Signal-Transistor Features * Dual N Channel * BSO 220N Product Summary Drain source voltage Drain-Source on-state resistance Continuous drain current VDS RDS(on) ID 20 0.13 3.2 V A Enhancement mode * Avalanche rated * Logic Level * dv/dt rated Type BSO220N Parameter Continuous drain current, one channel active Package SO 8 Symbol Ordering Code Q67000-S4010 Value 3.2 12.8 15 3.2 0.2 6 20 2 -55 ... +150 -55 ... +150 55/150/56 mJ A mJ kV/s V W C Unit A Maximum Ratings, at T j = 25 C, unless otherwise specified ID IDpulse EAS IAR EAR dv/dt T A = 25 C Pulsed drain current, one channel active T A = 25 C Avalanche energy, single pulse I D = 3.2 A, V DD = 25 V, R GS = 25 Avalanche current,periodic limited by T jmax Avalanche energy, periodic limited by Tjmax Reverse diode dv/dt I S = 3.2 A, V DS = 24 V, di/dt = 200 A/s Gate source voltage Power dissipation, one channel active VGS Ptot Tj Tstg T A = 25 C Operating temperature Storage temperature IEC climatic category; DIN IEC 68-1 Data Sheet 1 05.99 BSO 220N Thermal Characteristics Parameter Characteristics Thermal resistance, junction - soldering point Thermal resistance @ 10 sec., min. footprint Thermal resistance @ 10 sec., 6 cm2 cooling area 1) Symbol min. Values typ. max. 45 100 62.5 K/W Unit RthJS Rth(JA) Rth(JA) - Electrical Characteristics, at T j = 25 C, unless otherwise specified Symbol Values Parameter min. Static Characteristics Drain- source breakdown voltage typ. 1.6 max. 2 Unit V(BR)DSS VGS(th) IDSS 20 1.2 V VGS = 0 V, I D = 0.25 mA Gate threshold voltage, VGS = VDS I D = 10 A Zero gate voltage drain current A 0.1 10 1 100 100 nA 0.13 0.08 0.2 0.13 VDS = 20 V, V GS = 0 V, T j = 25 C VDS = 20 V, V GS = 0 V, T j = 150 C Gate-source leakage current IGSS RDS(on) VGS = 20 V, VDS = 0 V Drain-Source on-state resistance VGS = 4.5 V, I D = 2.6 A VGS = 10 V, I D = 3.2 A 1 Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70m thick) copper area for drain connection. PCB is vertical without blown air. Data Sheet 2 05.99 BSO 220N Electrical Characteristics Parameter Characteristics Transconductance Symbol min. Values typ. 3.8 130 80 40 15 max. 165 100 50 23 ns S pF Unit gfs Ciss Coss Crss td(on) 1.9 - VDS2*I D*RDS(on)max , ID = 2.6 A Input capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz Output capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz Reverse transfer capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz Turn-on delay time VDD = 15 V, V GS = 4.5 V, ID = 2.6 A, RG = 15 Rise time tr - 33 50 ns VDD = 15 V, V GS = 4.5 V, ID = 2.6 A, RG = 15 Turn-off delay time td(off) - 14 21 ns VDD = 15 V, V GS = 4.5 V, ID = 2.6 A, RG = 15 Fall time tf - 15 23 ns VDD = 15 V, V GS = 4.5 V, ID = 2.6 A, RG = 15 Data Sheet 3 05.99 BSO 220N Electrical Characteristics, at Tj = 25 C, unless otherwise specified Symbol Values Parameter at Tj = 25 C, unless otherwise specified Dynamic Characteristics Gate charge at threshold min. typ. 0.6 9.2 14.5 3.13 max. 0.9 13.8 22 - Unit QG(th) Qg(5) Qg V(plateau) - nC VDD = 15 V, ID0,1 A, VGS = 0 to 1 V Gate charge at Vgs=5V VDD = 15 V, ID = 2.6 A, VGS = 0 to 5 V Gate charge total nC V VDD = 15 V, ID = 2.6 A, VGS = 0 to 10 V Gate plateau voltage VDD = 15 V, ID = 2.6 A Reverse Diode Inverse diode continuous forward current IS I SM VSD t rr Q rr - 0.95 37 19 3.2 12.8 1.4 55 30 A TA = 25 C Inverse diode direct current,pulsed TA = 25 C Inverse diode forward voltage V ns C VGS = 0 V, I F = 5.2 A Reverse recovery time VR = 15 V, IF=IS , diF/dt = 100 A/s Reverse recovery charge VR = 15 V, IF=l S , diF/dt = 100 A/s Data Sheet 4 05.99 BSO 220N Power dissipation Drain current Ptot= f (TA) BSO220N ID = f (TA ) BSO220N 2.4 W 3.6 A 2.0 2.8 1.8 Ptot 1.6 1.4 1.2 2.4 ID 2.0 1.6 1.0 0.8 0.6 0.4 1.2 0.8 0.4 0.2 0.0 0 20 40 60 80 100 120 C 160 0.0 0 20 40 60 80 100 120 C 160 TA TA Safe operating area Transient thermal impedance ID = f ( V DS ) parameter : D = 0 , TA = 25 C 10 A 2 BSO220N ZthJA = f (tp ) parameter : D= tp/T 10 2 BSO220N K/W /ID tp = 21.0s 100 s 10 1 = VD S RD 1 ms 10 0 10 ms Z thJA o S( n) 10 1 ID D = 0.50 0.20 10 10 -1 DC 0 0.10 single pulse 0.05 0.02 0.01 10 -2 -1 10 10 0 10 1 V 10 2 10 -1 -5 -4 -3 -2 -1 0 1 2 10 10 10 10 10 10 10 10 s 10 4 VDS tp Data Sheet 5 05.99 BSO 220N Typ. output characteristics Drain-source on-resistance I D = f (VDS) parameter: tp = 80 s BSO220N RDS(on) = f (Tj) parameter : I D = 2.6 A, VGS = 4.5 V BSO220N 8.0 A Ptot = 2W 0.40 li j k hg f e VGS [V] a 2.5 b c 3.0 0.32 6.0 RDS(on) 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 8.0 10.0 0.28 0.24 0.20 0.16 0.12 0.08 ID 5.0 d e 98% df 4.0 g h i 3.0 c typ j k l 2.0 1.0 a b 0.04 0.00 -60 0.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 V 5.0 -20 20 60 100 C 180 VDS Tj Typ. capacitances C = f (VDS) parameter: V GS = 0 V, f = 1 MHz 10 3 pF C Crss 10 2 Coss Ciss 10 1 0 5 10 15 V 25 VDS Data Sheet 6 05.99 BSO 220N Typ. transfer characteristics I D= f (VGS) parameter: tp = 80 s VDS 2 x I D x RDS(on) max 6.0 A Gate threshold voltage VGS(th) = f (Tj) parameter : VGS = VDS , ID = 10 A 3.2 V 5.0 4.5 4.0 2.4 VGS(th) ID 2.0 3.5 3.0 2.5 1.6 max 1.2 2.0 1.5 1.0 0.4 0.5 0.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 V 0.8 typ min 5.0 0.0 -60 -20 20 60 100 V 160 VGS Tj Forward characteristics of reverse diode I F = f (VSD) parameter: Tj , tp = 80 s 10 2 BSO220N A 10 1 IF 10 0 Tj = 25 C typ Tj = 150 C typ Tj = 25 C (98%) Tj = 150 C (98%) 10 -1 0.0 0.4 0.8 1.2 1.6 2.0 2.4 V 3.0 VSD Data Sheet 7 05.99 BSO 220N Avalanche Energy EAS = f (Tj) parameter: ID = 3.2 A, VDD = 25 V RGS = 25 20 mJ Typ. gate charge VGS = f (Q Gate) parameter: ID puls = 2.6 A BSO220N 16 V 16 12 14 VGS EAS 12 10 8 6 10 8 0,2 VDS max 0,8 VDS max 6 4 4 2 0 20 2 40 60 80 100 120 C 160 0 0 2 4 6 8 10 12 14 16 18nC 21 Drain-source breakdown voltage Tj Q Gate V(BR)DSS = f (Tj) BSO220N 24.5 V 23.5 V(BR)DSS 23.0 22.5 22.0 21.5 21.0 20.5 20.0 19.5 19.0 18.5 18.0 -60 -20 20 60 100 C 180 Tj Data Sheet 8 05.99 |
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